Research Associate in Semiconductor Epitaxy Integrated with Optical Lithography
Physical and Environmental Sciences,Materials Science,Physics and Astronomy,Engineering and Technology,Electrical and Electronic Engineering
Short info about job
Company: University of Sheffield
Department: Department of Electronic and Electrical Engineering
Salary: £30,175 to £34,956 per annum (Grade 7)
Hours: Full Time
Contract type: Fixed-Term/Contract
Type / Role: Academic or Research
Phone: +44-191 8814300
Fax: +44-1536 2183776
E-mail: N\A
Site: N\A
Detail information about job Research Associate in Semiconductor Epitaxy Integrated with Optical Lithography. Terms and conditions vacancy
Fixed-term until 30 June 2020.
The University of Sheffield has a world-wide reputation for excellence in semiconductor research. Major facilities and research grants are hosted in both the department of Electronic and Electrical Engineering and in the department of Physics. We have large programmes of research in semiconductor Quantum Technologies, Photonics, Electronics, Semiconductor Epitaxy, and novel materials. The University is also host to the National Centre for III-V Technologies, which includes the largest concentration of Molecular Beam Epitaxy (MBE) and Chemical Vapour Deposition (CVD) equipment in the UK for creating new semiconductor materials and devices such as lasers, solar cells, transistors, and quantum devices.
The successful candidate will work in the Semiconductor Materials and Devices group (SMD) of the Department of Electronic and Electrical Engineering, and will develop a new method of patterning and growth for the production of arrays of semiconductor nanostructures, such as quantum dots and quantum wires. The post will play an important role in a new EPSRC project which aims to create large scale arrays of identical semiconductor nanostructures (quantum dots, quantum wires) by integrating epitaxial growth with optical interference lithography.
The Research Associate will have access to new state of the art laser and MBE growth facilities and will be expected to work with the staff investigators to develop this novel technique and then to demonstrate device application potential. The approach has a number of potential applications, of which one of the key areas is the creation of highly ordered QD array for quantum information processing (QIP).
Candidates are required to have a first degree in materials science, physics, or electronic engineering and a PhD (or equivalent experience in industry) of either semiconductor epitaxy, semiconductor lithography, or laser interference methods (e.g. surface patterning, processing, metrology, etc).