Fully-funded PhD Studentship - III-nitride Semiconductors and Devices
Physical and Environmental Sciences,Physics and Astronomy,Engineering and Technology,Electrical and Electronic Engineering
Short info about job
Company: University of Sheffield
Department: Electronic and Electrical Engineering
Hours: Full Time
Type / Role: PhD
Phone: +44-1451 6567596
Fax: +44-1503 9635803
E-mail: N\A
Site: N\A
Detail information about job Fully-funded PhD Studentship - III-nitride Semiconductors and Devices. Terms and conditions vacancy
Applications are invited for a fully-funded 3.5 year PhD studentship to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors.
Project description
The studentship holder will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve integrated devices combining III-nitrides and other III-Vs on patterned substrates, where the advanced epitaxial growth and novel device fabrication of the integrated devices are essential for the project. She/he will need to prepare and present results regularly, and will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.
The studentship is based within the Centre for GaN Materials and Devices. Led by Professor Tao Wang the Centre currently has 22 team members including academic members of staff, a research administrator, research fellows and Ph.D students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.
Academic requirements
This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a strong background in semiconductor materials & physics. Candidates from a Physics department are particularly welcome. A first-degree of class 1 or 2:1 class or its international equivalent is required.
Funding notes
The studentship is fully funded for 3.5 years and is open to UK/EU applicants who meet the University’s entrance requirements (however, non-UK/EU candidates in an exceptional case will be considered). Funding covers tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.
Application and enquiries
Interested applicants should apply by submitting their CV and covering letter to Professor Tao Wang ([email protected]) or Ms Katherine Greenacre at [email protected];
For more information on post graduate research in EEE and the application process visit www.sheffield.ac.uk/eee/pgr. Informal enquiries can be addressed to Professor Tao Wang.
The studentship can start at the earliest opportunity.